? 2000 ixys all rights reserved 1 - 2 features international standard package with dcb ceramic base plate planar passivated chips short recovery time low switching losses soft recovery behaviour isolation voltage 3600 v~ ul registered e 72873 applications antiparallel diode for high frequency switching devices free wheeling diode in converters and motor control circuits inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses dimensions in mm (1 mm = 0.0394") 3000 3600 -40...+150 -40...+125 110 28800 29300 23300 23800 2400 2640 2160 2380 150 12.7 9.6 50 2.25-2.75/20-25 4.50-5.50/40-48 150 1.05 1.27 260 1.19 1.36 0.228 0.143 12 3 80 300 250 300 300 44 400 66 preliminary data i favm rating includes reverse blocking losses at t vjm , v r = 0.6 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions 75 430 a 75 304 1640 0.85 1.34 m mea 300-06da mek 300-06da mee 300-06da 749 875 123 123 123 v rsm v rrm type v v 600 600 symbol test conditions maximum ratings i frms t c = c i favm ?? t c = c; rectangular, d = 0.5 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm a i fsm t vj = 45 c; t = 10 ms (50 hz), sine a t = 8.3 ms (60 hz), sine a t vj = 150 c; t = 10 ms (50 hz), sine a t = 8.3 ms (60 hz), sine a i 2 t t vj = 45 c; t = 10 ms (50 hz), sine a 2 s t = 8.3 ms (60 hz), sine a 2 s t vj = 150 c; t = 10 ms (50 hz), sine a 2 s t = 8.3 ms (60 hz), sine a 2 s t vj c t stg c t smax c p tot t c = 25 cw v isol 50/60 hz, rms t = 1 min v~ i isol 1 ma t = 1 s v~ m d mounting torque (m6) nm/lb.in. terminal connection torque (m6) nm/lb.in. d s creeping distance on surface mm d a strike distance through air mm a maximum allowable acceleration m/s 2 weight g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 cv r = v rrm ma t vj = 25 cv r = 0.8 ? v rrm ma t vj = 125 cv r = 0.8 v rrm ma v f i f = a; t vj = 125 cv t vj =25 cv i f = a; t vj = 125 cv t vj =25 cv v t0 for power-loss calculations only v r t r thjh dc current k/w r thjc dc current k/w t rr i f = a t vj = 100 cns i rm v r = v t vj = 25 ca -di/dt = a/ st vj = 100 ca fast recovery epitaxial diode (fred) module mea 300-06 da mek 300-06 da mee 300-06 da v rrm = 600 v i favm = 304 a t rr = 250 ns 1 2 3
? 2000 ixys all rights reserved 2 - 2 200 600 1000 0 400 800 200 250 300 350 400 0.001 0.01 0.1 1 10 0.00 0.05 0.10 0.15 0.20 0.25 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 10 30 50 0 20 40 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v fr di f /dt v 200 600 1000 0 400 800 0 50 100 150 200 100 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 0 100 200 300 400 500 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v c a/ m s a/ m s t rr ns t fr z thjs a/ m s s mea 300-06 da mee 300-06 da mek 300-06 da 814 fig. 7 transient thermal impedance junction to heatsink t vj = 100 c v r = 300v t vj = 100 c i f = 300a constants for z thjs calculation: ir thi (k/w) t i (s) 1 0.002 0.08 2 0.008 0.024 3 0.054 0.112 4 0.164 0.464 t vj = 100 c v r = 300v t vj = 100 c v r = 300v q r i rm t vj =125 c t vj =25 c i f = 600a i f = 300a i f = 150a i f = 600a i f = 300a i f = 150a i f = 600a i f = 300a i f = 150a v fr t fr fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 2 typ. reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus max. voltage drop v f per leg fig. 4 dynamic parameters q r , i rm versus junction temperature t vj fig. 5 typ. recovery time t rr versus -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt z thjh
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